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| FDC640P August 2000 FDC640P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages. Features * -4.5 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V RDS(ON) = 0.077 @ VGS = -2.5 V * * * Rugged gate rating (12V). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications * Load switch * Battery protection * Power management D D S 1 6 2 5 SuperSOT -6 TM D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed TA = 25C unless otherwise noted Parameter Ratings -20 (Note 1a) Units V V A W C 12 -4.5 -20 1.6 0.8 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 C/W C/W Package Outlines and Ordering Information Device Marking .640 2000 Fairchild Semiconductor International Device FDC640P Reel Size 7'' Tape Width 8mm Quantity 3000 units FDC640P, Rev.C FDC640P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = -12 V, VDS = 0 V Min -20 Typ Max Units V Off Characteristics -17 -1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -4.5 A VGS = -4.5V, ID = -4.5A, TJ=125C VGS = -2.5 V, ID = -3.6 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -4.5 A -0.6 -1 3 0.037 0.054 0.060 -1.5 V mV/C 0.05 0.08 0.077 ID(on) gFS -10 13 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -25 V, VGS = 0 V, f = 1.0 MHz 1065 270 105 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 8.5 10 55 25 17 18 90 40 14 ns ns ns ns nC nC nC VDS = -10 V, ID = -4.5 A, VGS = -4.5 V, 10 2.1 2.9 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -1.3 -0.75 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDC640P, Rev.C FDC640P Typical Characteristics 20 VGS = -4.5V -4.0V 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.5V -3.0V -ID, DRAIN CURRENT (A) 1.8 VGS = -2.5V 1.6 1.4 1.2 1 0.8 0 5 10 -ID , DRAIN CURRENT (A) 15 20 15 -2.5V 10 -3.0V -3.5V -4.0V -4.5V 5 -2.0V 0 0 0.5 1 1.5 2 2.5 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 0.14 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 ID = -4.5A VGS = -4.5V ID = -2.3A 0.12 0.1 0.08 0.06 0.04 0.02 0 TA = 25oC TA = 125oC -25 0 25 50 75 100 o 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 TA = -55oC 25 C 125oC o 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25 C -55oC o -ID, DRAIN CURRENT (A) 16 12 8 4 0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC640P, Rev.C FDC640P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -4.5A 4 (continued) 1600 VDS = -5V 1400 -10V -15V f = 1MHz VGS = 0 V CISS 1200 1000 800 3 2 600 400 1 200 0 0 2 4 6 8 10 12 Qg, GATE CHARGE (nC) COSS CRSS 0 5 10 15 20 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 100 100s 1ms POWER (W) 5 SINGLE PULSE RJA = 156oC/W 4 TA = 25oC -ID, DRAIN CURRENT (A) 10 R DS(ON) LIMIT 1 VGS= -4.5V SINGLE PULSE RJA= 156oC/W T A= 25oC 0.01 0.1 1 10ms 100ms 1s DC 3 2 0.1 1 0 10 100 0.1 1 10 SINGLE PULSE TIME (SEC) 100 1000 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R JA (t) = r(t) * R JA R JA = 156C/W t1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.00001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDC640P, Rev.C SuperSOTTM-6 Tape and Reel Data and Package Dimensions SSOT-6 Packaging Configuration: Figur e 1.0 Packaging Description: Customize Label Anti static Cover Tape SSOT-6 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a pizza box (illustrated in figure 1.0) made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains three reels maximum. And these pizza boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. F63TNR Label Embossed Carrier Tape 631 631 SSOT-6 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no f l ow c ode ) 631 631 631 Pin 1 D87Z TNR 10,000 13" 343x343x64 30,000 0.0158 0.4700 TNR 3,000 7" Dia 184x187x47 9,000 0.0158 0.1440 SSOT-6 Unit Orientation 343mm x 342mm x 64mm Intermediate box fo r D87Z Option F63TNR Label F63TNR Label F63TNR Label sa mpl e 184mm x 187mm x 47mm Pizza Box fo r Standar d Opti on F63TNR Label LOT: CBVK741B019 FSID: FDC633N QTY: 3000 SPEC: SSOT-6 Tape Leader and Trailer Configuration: Figur e 2.0 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Comp onent s Traile r Tape 300mm mi nimum or 75 empty poc kets Lead er Tape 500mm mi nimum or 125 emp ty poc kets 1998 Fairchild Semiconductor Corporation August 1999, Rev. C SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SSOT-6 (8mm) A0 3.23 +/-0.10 B0 3.18 +/-0.10 W 8.0 +/-0.3 D0 1.55 +/-0.05 D1 1.125 +/-0.125 E1 1.75 +/-0.10 E2 6.25 min F 3.50 +/-0.05 P1 4.0 +/-0.1 P0 4.0 +/-0.1 K0 1.37 +/-0.10 T 0.255 +/-0.150 Wc 5.2 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SSOT-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 8mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 2.165 55 4.00 100 Dim W1 0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0 Dim W2 0.567 14.4 0.567 14.4 Dim W3 (LSL-USL) 0.311 - 0.429 7.9 - 10.9 0.311 - 0.429 7.9 - 10.9 8mm 13" Dia July 1999, Rev. C SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SuperSOT -6 (FS PKG Code 31, 33) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 1998 Fairchild Semiconductor Corporation September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1 |
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